100N10B - Power MOSFET

onsemi

Key Features

Low On-Resistance.
Low Gate Charge.
High Speed Switching.
100% Avalanche Tested.
Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C VDSS 100V RDS(on) Max 7.2 mΩ@15V 8.7 mΩ@10V ID Max 100A Electrical Connection N-Channel 2 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Storage Temperature Source Cu.

100N10B power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	100N10B
Manufacturer	onsemi
File Size	646.77 KB
Description	Power MOSFET
Datasheet	100N10B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
100N10	N-Channel PowerTrench MOSFET	ETC
100N10	Nch 100V 10A Power MOSFET	ROHM
100N10	Power MOSFETs	IXYS
100N10F7	N-channel Power MOSFET	STMicroelectronics
100N10LF7	N-CHANNEL POWER MOSFET	STMicroelectronics

Other Datasheets by onsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C VDSS 100V RDS(on) Max 7.2 mΩ@15V 8.