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100N10F7 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL100N10F7 VDSS RDS(on) max ID PTOT 100 V 0.0073 Ω 19 A 5 W.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL100N10F7 VDSS RDS(on) max ID PTOT 100 V 0.0073 Ω 19 A 5 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. S(1, 2, 3) 12 34 Top View AM15540v2 Order code STL100N10F7 Table 1.