100N10LF7 Datasheet | STMicroelectronics

STD100N10LF7AG Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package - production data Features Order code STD100N10LF7AG VDS 100 V RDS(on) max. 9 mΩ ID 80 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) - Designed for automotive applications and AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent FoM (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing...