100N10 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Key Features

RDS(on) = 8.2mΩ ( Typ. )@ VGS = 10V, ID = 75A.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(on).
High power and current handing capability.
RoHS compliant.

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100N10 n-channel powertrench mosfet by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	100N10
Manufacturer	Unknown Manufacturer
File Size	848.07 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	100N10 Datasheet

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Full PDF Text Transcription (Reference)

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100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handing capability • RoHS compliant Applications DC to DC converters / Synchronous Rectification Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.