| Part Number | 100N10 |
|---|---|
| Manufacturer | Unknown Manufacturer |
| Overview |
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching .
* RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handing capability * RoHS compliant Applications DC to DC converters / Synchronous Rectification Description This N-Channel. |
100N10 Datasheet
The 100N10 is a N-Channel PowerTrench MOSFET.
| Part Number | 100N10 |
|---|---|
| Description | Nch 100V 10A Power MOSFET |
| Manufacturer | ROHM |
| Overview | RSD100N10FRA Nch 100V 10A Power MOSFET Datasheet lOutline VDSS 100V TO-252 RDS(on)(Max.) 133mΩ SC-63 ID ±10A CPT3 PD 20W lFeatures 1) Low on-resistance 2) Fast switch. 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Bas. |
| Part Number | 100N10 |
|---|---|
| Description | Power MOSFETs |
| Manufacturer | IXYS |
| Overview | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 150 A trr £ 200 ns R DS(on) 12 mW 12 mW TO-264 AA. q International standard packages q JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification q miniBLOC with Aluminium nitride isolation q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance q Fast intr. |