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STGB10NB37LZ STGP10NB37LZ
10 A - 410 V internally clamped IGBT
Features
■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature
Applications
■ Automotive ignition
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection.
TAB
3 2 1
TO-220
TAB
3 1
D²PAK
Figure 1.
Internal schematic diagram
C (2,TAB)
G (1)
Table 1.