10N60M2
10N60M2 is N-channel Power MOSFET manufactured by STMicroelectronics.
ures
Order code STFH10N60M2
VDS @ TJmax 650 V
RDS(on) max 0.60 Ω
ID 7.5 A
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
Applications
- Switching applications
- LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
Order code STFH10N60M2
S(3)
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
TO-220FP wide creepage
Packing Tube
May 2017
Doc ID029418 Rev 4
This is information on a product in full production.
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