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10N60M2 - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STFH10N60M2 VDS @ TJmax 650 V RDS(on) max 0.60 Ω ID 7.5 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.
  • Wide distance of 4.25 mm between the pins.

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Datasheet preview – 10N60M2

Datasheet Details

Part number 10N60M2
Manufacturer STMicroelectronics
File Size 708.67 KB
Description N-channel Power MOSFET
Datasheet download datasheet 10N60M2 Datasheet
Additional preview pages of the 10N60M2 datasheet.

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Full PDF Text Transcription

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STFH10N60M2 N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFH10N60M2 VDS @ TJmax 650 V RDS(on) max 0.60 Ω ID 7.5 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected  Wide distance of 4.25 mm between the pins Applications  Switching applications  LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
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