Datasheet4U Logo Datasheet4U.com

10NB37LZ - STGB10NB37LZ

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection.

Key Features

  • Low threshold voltage.
  • Low on-voltage drop.
  • Low gate charge.
  • High current capability.
  • High voltage clamping feature.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10N03L IPP10N03L Infineon Technologies AG
10N100-FL 1000V N-CHANNEL POWER MOSFET UTC
10N12 N-Channel MOSFET INCHANGE
10N120BND HGTG10N120BND Fairchild Semiconductor
10N15 N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by STMicroelectronics

Part Number Description
10N3L N-channel Power MOSFET
10N60M2 N-channel Power MOSFET
10NK50Z STF10NK50Z
10NK60Z N-channel MOSFET
10NK60ZFP STP10NK60ZFP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features ■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. TAB 3 2 1 TO-220 TAB 3 1 D²PAK Figure 1. Internal schematic diagram C (2,TAB) G (1) Table 1.