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11NM65N - STD11NM65N

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V < 0.455 Ω 11 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • low gate input resistance Figure 1. Internal schematic diagram ' Ć7$% .

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Full PDF Text Transcription

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STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet - production data TAB 3 1 DPAK 1 2 3 I²PAKFP 3 2 1 TO-220FP TAB 3 2 1 TO-220 Features Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V < 0.455 Ω 11 A • 100% avalanche tested • Low input capacitance and gate charge • low gate input resistance Figure 1. Internal schematic diagram ' Ć7$% Applications • Switching applications Description *  6  $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
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