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11N3L - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STL11N3LLH6 VDS 30 V RDS(on) max 7.5 mΩ ID 11 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL11N3LLH6 N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Features Order code STL11N3LLH6 VDS 30 V RDS(on) max 7.5 mΩ ID 11 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table 1: Device summary Marking Package 11N3L PowerFLATTM 3.3x3.