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12N60M2 Datasheet

N-channel Power MOSFET

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STD12N60M2
Datasheet
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh M2
Power MOSFET in a DPAK package
TAB
23
1
DPAK
D(2, TAB)
G(1)
S(3)
AM15572v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STD12N60M2
600 V
0.450 Ω
9A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
Product status
STD12N60M2
Product summary
Order code
STD12N60M2
Marking
12N60M2
Package
DPAK
Packing
Tape and reel
DS10854 - Rev 2 - April 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

12N60M2 Datasheet

N-channel Power MOSFET

No Preview Available !

1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC= 100 °C
IDM (1) Drain current (pulsed)
PTOT Total power dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
dv/dt (3) MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 9 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Rthj-case Thermal resistance junction-case
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Parameter
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
STD12N60M2
Electrical ratings
Value
± 25
9
5.7
36
85
15
50
Unit
V
A
A
A
W
V/ns
V/ns
- 55 to 150 °C
Value Unit
1.47 °C/W
50 °C/W
Value Unit
2.6
A
117 mJ
DS10854 - Rev 2
page 2/19


Part Number 12N60M2
Description N-channel Power MOSFET
Maker STMicroelectronics
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12N60M2 Datasheet PDF






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