12NM50 Key Features
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing
- Part: 12NM50
- Manufacturer: STMicroelectronics (official site)
- Size: 514.59 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| 12NM50ND | N-Channel MOSFET |
| 12NM60N | N-Channel MOSFET |
| 12N170K5 | N-channel Power MOSFET |
| 12N60M2 | N-channel Power MOSFET |
| 12N65M2 | N-Channel Power MOSFET |
12NM50 Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the pany’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s...