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13003 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Very high switching speed.

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Other Datasheets by STMicroelectronics

Part Number Description
13005A High voltage fast-switching NPN power transistor
13005C High voltage fast-switching NPN power transistor
13005D High voltage fast-switching NPN power transistor
13005E High voltage fast-switching NPN power transistor
13005F High voltage fast-switching NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - production data Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SC06960r E(1) Part number ST13003 ST13003-K Marking 13003 13003 Table 1.
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