19NM60
19NM60 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
3 2 1
TO-247
Figure 1. Internal schematic diagram
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Order code
VDS (@Tjmax)
STW19NM60N 650 V
RDS(on) max.
ID PTOT
0.285 Ω 13 A 110 W
- Designed for automotive applications and AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
!-V
Order codes STW19NM60N
Table 1. Device summary
Marking
Package
19NM60N
TO-247
Packaging Tube
October 2013
This is information on a product in full production.
Doc ID024392 Rev 2
1/13
.st.
Contents
Contents
STW19NM60N
Electrical...