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2N2907 Datasheet

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

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2N2905
2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. They are designed for high speed saturated
switching and general purpose application.
2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
available on request.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
for 2N2905
for 2N2907
at Tcase 25 oC
for 2N2905
for 2N2907
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
-60
-40
-5
-0.6
0.6
0.4
3
1.8
-65 to 200
200
Unit
V
V
V
A
W
W
W
W
oC
oC
1/5


STMicroelectronics Electronic Components Datasheet

2N2907 Datasheet

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

No Preview Available !

2N2905/2N2907
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
M ax
Max
TO-39
58.3
292
TO -18
97.3
437.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
VCB = -50 V
Tc ase = 150 oC
ICEX Collect or Cut-off
Current (VBE = -0.5V)
IBEX Base Cut-off Current
(VBE = -0.5V)
V( BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO Emitt er-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collect or-Emitter
Saturation Voltage
VCE = -30 V
VCE = -30 V
IC = -10 µA
IC = -10 mA
IE = -10 µA
IC = -150 mA
IC = -500 mA
IB = -15 mA
IB = -50 mA
VBE(s at)Base-Emitt er
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
hFEDC Current G ain
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
IC = -150 mA
IC = -500 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT
CEBO
Transition F requency
Emitter Base
Capacitance
VCE = -20 V f = 100 MHz
IC = -50 mA
IC = 0 VEB = -2 V f = 1MHz
CCBO
Collector Base
Capacitance
IE = 0 VCB = -10 V f = 1MHz
td Delay Time
VCC = -30 V IC = -150 mA
IB1 = -15 mA
tr Rise Time
VCC = -30 V IC = -150 mA
IB1 = -15 mA
ts Storage Time
VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA
tf Fall Time
VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1 %
Min. Typ.
-60
-40
-5
35
50
75
100
30
200
M a x.
-20
-20
-50
-50
-0.4
-1.6
-1.3
-2.6
300
30
8
10
40
80
30
Unit
nA
µA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
2/5


Part Number 2N2907
Description 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS
Maker STMicroelectronics
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2N2907 Datasheet PDF






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