2SD1047 - NPN Transistor

Datasheet Summary

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Features

High breakdown voltage VCEO = 140 V.
Typical ft = 20 MHz.
Fully characterized at 125 oC.

STMicroelectronics

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Datasheet Details

Part number	2SD1047
Manufacturer	STMicroelectronics
File Size	159.12 KB
Description	NPN Transistor
Datasheet	2SD1047 Datasheet
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2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2.

Published: Oct 11, 2016 |