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2STW4466 Datasheet High power NPN epitaxial planar bipolar transistor

Manufacturer: STMicroelectronics

General Description

The device is a NPN transistor manufactured in low voltage planar technology using base island layout.

The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour.

Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.

Overview

2STW4466 High power NPN epitaxial planar bipolar transistor.

Key Features

  • High breakdown voltage VCEO = www. DataSheet4U. com.
  • Complementary to 2STW1693.
  • 80 V Typical ft = 20 MHz Fully characterized at 125 oC.