Datasheet4U.com

3N150 - N-Channel MOSFET

Product Overview

STMicroelectronics

📥 Download Datasheet

3N150 N-Channel MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – 3N150

Datasheet Details

Part number	3N150
Manufacturer	STMicroelectronics
File Size	672.53 KB
Description	N-Channel MOSFET
Datasheet	3N150 Datasheet
Additional preview pages of the 3N150 datasheet.

Product details

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process.

Features

Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150.
100% avalanche tested.
Intrinsic capacitances and Qg minimized.
High speed switching.
Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ. ).

📁 Similar Datasheet

3N150-E3 - N-CHANNEL POWER MOSFET (UTC)
3N150S - N-Channel MOSFET (INCHANGE)
3N152 - PWM/VFM Step-down DC/DC Converter (RICOH electronics devices division)
3N153 - SILICON INSULATED GATE FIELD EFFECT TRANSISTOR (ETC)
3N154 - SILICON MOS TRANSISTOR (ETC)
3N155 - MOSFET SWITCHING (Motorola)
3N155A - P-channel Transistor (ETC)
3N156 - MOSFET SWITCHING (Motorola)

Other Datasheets by STMicroelectronics

Published: Dec 1, 2013 |