3N65M Datasheet | STMicroelectronics

Features Order code RDS(on ) max. STL3N65M2 650 V 1.8 Ω - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected ID 2.3 A Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(1, 2, 3) NG4D5678S123Z Product status link STL3N65M2 Product summary Order code STL3N65M2 Marking Package Power FLAT 3.3x3.3 HV Packing Tape and reel DS11065 - Rev 4 - May 2022 For further information contact your local STMicroelectronics sales office. .st. STL3N65M2 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source...