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50N65DM2 Datasheet

N-Channel MOSFET

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STW50N65DM2AG
Datasheet
Automotive-grade N-channel 650 V, 70 mΩ typ., 38 A
Power MOSFET MDmesh DM2 in a TO-247 package
Features
Order code
STW50N65DM2AG
VDS
650 V
RDS(on) max.
87 mΩ
ID
38 A
3
2
1
TO-247
D(2, TAB)
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
G(1)
• Switching applications
S(3)
NG1D2TS3Z
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link
STW50N65DM2AG
Product summary(1)
Order code
STW50N65DM2AG
Marking
50N65DM2
Package
TO-247
Packing
Tube
1. The HTRB test was performed at 80%
V(BR)DSS in compliance with AEC-Q101
rev. C. All the other tests were
performed according to rev. D.
DS11149 - Rev 3 - August 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

50N65DM2 Datasheet

N-Channel MOSFET

No Preview Available !

STW50N65DM2AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Gate-source voltage (static)
VGS
Gate-source voltage (dynamic AC (f > 1 Hz))
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
di/dt(2)
Peak diode recovery current slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature
TJ
Operating junction temperature
1. Pulse width is limited by safe operating area.
2. ISD ≤ 38 A, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.
3. VDS ≤ 520 V.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive
EAS (1)
Single pulse avalanche energy
1. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.
Value
±25
±30
38
24
152
300
100
1000
100
-55 to 150
Unit
V
A
A
W
V/ns
A/μs
V/ns
°C
Value
0.42
50
Unit
°C/W
°C/W
Value
Unit
7.5
A
850
mJ
DS11149 - Rev 3
page 2/12


Part Number 50N65DM2
Description N-Channel MOSFET
Maker STMicroelectronics
PDF Download

50N65DM2 Datasheet PDF






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