50N65DM2
Features
Order code STW50N65DM2AG
VDS 650 V
RDS(on) max. 87 mΩ
ID 38 A
3 2 1 TO-247
D(2, TAB)
- AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
G(1)
- Switching applications
S(3)
NG1D2TS3Z
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link STW50N65DM2AG
Product summary(1)
Order code
STW50N65DM2AG
Marking
Package
TO-247
Packing
Tube
1. The HTRB test was performed at 80% V(BR)DSS in pliance with AEC-Q101 rev. C. All the other tests were performed according to rev. D.
DS11149
- Rev 3
- August 2020 For further...
