Order code STW50N65DM2AG VDS 650 V RDS(on) max. 87 mΩ ID 38 A 3 2 1 TO-247 D(2, TAB)
* AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate.

G(1)
* Switching applications S(3) NG1D2TS3Z Description This high-voltage N-channel Power MOSFET is part of th.

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters a.

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