Datasheet4U Logo Datasheet4U.com

6N65K3 - N-channel Power MOSFET

General Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram AM15572v1 Order code VDS RDS(on) max STF6N65K3(045Y) 650 V 1.3 Ω ID 5.4 A PTOT 30 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
6N65K-MT N-CHANNEL POWER MOSFET Unisonic Technologies
6N65 N-CHANNEL POWER MOSFET Unisonic Technologies
6N65-C N-CHANNEL POWER MOSFET Unisonic Technologies
6N65-HC N-CHANNEL POWER MOSFET UTC
6N65-P N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by STMicroelectronics

Part Number Description
6N65M2 N-Channel Power MOSFET
6N60M2 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF6N65K3(045Y) N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram AM15572v1 Order code VDS RDS(on) max STF6N65K3(045Y) 650 V 1.3 Ω ID 5.4 A PTOT 30 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.