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8DN6LF6 Datasheet - STMicroelectronics

8DN6LF6 N-channel Power MOSFET

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking 8DN6LF6 Package SO.

8DN6LF6 Features

* Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6)

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level G1(2) G2(4) A

8DN6LF6 Datasheet (311.06 KB)