8DN6LF3 Datasheet | STMicroelectronics

Features Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 6 D1 - AEC-Q101 qualified - Logic level VGS(th) - 175 °C maximum junction temperature - 100% avalanche rated - Wettable flank package Applications - Switching applications Description This device is an N-channel Power MOSFET developed using STrip FET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. NG14G22D1D2RSS13S21 Product status link STL8DN6LF3 Product summary Order code STL8DN6LF3 Marking Package Power FLAT 5x6 double island Packing Tape and reel DS8667 - Rev 7 - March 2020 For further information contact your local STMicroelectronics sales office. .st. STL8DN6LF3 Electrical...