8DN6LF6 Datasheet | STMicroelectronics

Features Order code RDS(on) max. 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) - AEC-Q101 qualified - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss - Logic level G1(2) G2(4) Applications - Switching applications PTOT 3.2 W S1(1) S2(3) SC12820 Description This device is a dual N-channel Power MOSFET developed using the STrip FET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking Package SO-8 Packing Tape and reel DS11953 - Rev...