8DN10LF3
8DN10LF3 is Automotive-grade dual N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code STL8DN10LF3
VDS 100 V
RDS(on) max. 35 mΩ
ID 7.8 A
- Designed for automotive applications and AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- 100% avalanche rated
- Wettable flank package
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STrip FET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Order code STL8DN10LF3
Marking 8DN10LF3
Table 1: Device summary Package
Power FLATTM 5x6 double island
June 2016
Doc ID023009 Rev 8
This is information on a product in full production.
Packing Tape and reel
1/15
.st.
Contents
STL8DN10LF3
Contents
1 Electrical ratings 3 2 Electrical characteristics 4
2.1 Electrical characteristics (curves) 6
3 Test circuits 8 4 Package information 9
4.1 Power FLAT ™ 5x6 double island package information 9 4.2 Packing information 12
5 Revision history 14
2/15
Doc ID023009 Rev 8
STL8DN10LF3
Electrical ratings
Symbol VDS VGS ID(1) ID(1) ID(2) ID(2)
IDM(2)(3) PTOT(1) PTOT(2)
IAV EAS Tj...
