AM81720-012 transistors equivalent, rf & microwave transistors.
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OU.
The AM81720-012 is designed specifically for Telecommunications applications. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted,.
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