rf & microwave transistors.
REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING O.
The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths. duty cycles and temperatures, and can wi.
Image gallery
TAGS