AM83135-040 transistors equivalent, rf & microwave transistors.
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PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTP.
The AM83135-040 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10µsec pulse width and 10% duty cycle, but is capable of operation over.
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