AM83135-030 datasheet, transistors equivalent, STMicroelectronics

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AM83135-030 Application

. . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTP.

AM83135-030 Description

The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation ove.

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