| Description | The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Param... |
| Features |
e Junction-case 1.78
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CBO Parameter Collector Cut-off Current (I E = 0) Test Co nditions for BDX33B/34B for BDX33C/34C T cas e = 100 oC for BDX33B/34B f or BDX33C/34C for BDX33B/34B for BDX33C/34C o T cas e = 100 C for BDX33B/34B for BDX33C/34C V EB = 5 V I C =10...
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| Datasheet |
 BDX33B Datasheet - 35.88KB |
