BDX33 - Darlington Transistors

Multicomp

Datasheet Details

Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C.
Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetre.

📁 BDX33 Similar Datasheet

BDX33A - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX33B - Darlington Complementary Silicon Power Transistors (Motorola Inc)
BDX33C - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
BDX33D - NPN/PNP PLASTIC POWER TRANSISTORS (CDIL)
BDX30 - PNP SILICON PLANAR TRANSISTORS (Siemens Semiconductor Group)
BDX34 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX34A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX34B - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)

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Published: Oct 25, 2016 |