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BU406 Datasheet

SILICON NPN SWITCHING TRANSISTOR

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BU406
SILICON NPN SWITCHING TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR
MONOCHROME TV
DESCRIPTION
The BU406 is a silicon epitaxial planar NPN
transistor in Jedec TO-220 plastic package.
It is a fast switching device for use in horizontal
deflection output stages of large screens MTV
receivers with 110o CRT.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEV
VCEO
VEBO
IC
ICM
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = -1.5 V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (repetitive)
Collector Peak Current (tp = 10 ms)
Base Current
Total Dissipation at Tc 25 oC
Storage Temperature
Max. Operating Junction Temperature
June 1997
Value
400
400
200
6
7
10
15
4
60
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

BU406 Datasheet

SILICON NPN SWITCHING TRANSISTOR

No Preview Available !

BU406
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE =400 V
VCE =250 V
VCE =250 V
Tcase = 150oC
IEBO
VCE(sat)
Emitter Cut-off Current
(IC = 0)
Collector-emitter
Saturation Voltage
VEB = 6 V
IC = 5 A
IB = 0.5 A
VBE(sat)Base-emitter
Saturation Voltage
IC = 5 A
IB = 0.5 A
fT Transition-Frequency IC = 0.5 A
VCE = 10V
toff∗∗ Turn-off Time
IC = 5 A
IBend = 0.5 A
Is/b Second Breakdown
Collector Current
VCE = 40 V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
t = 10 ms
Min.
10
Typ.
4
Max.
5
100
1
1
1
1.2
0.75
Unit
mA
µA
mA
mA
V
V
MHz
µs
A
2/4


Part Number BU406
Description SILICON NPN SWITCHING TRANSISTOR
Maker ST Microelectronics
Total Page 4 Pages
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