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BU508AF - High voltage NPN Power transistor

Description

The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.

Features

  • State-of-the-art technology:.
  • Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness Fully insulated power package U. L. compliant In compliance with the 2002/93/EC European directive 1 2 3 ISOWATT218FX.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BU508AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness Fully insulated power package U.L. compliant In compliance with the 2002/93/EC European directive 1 2 3 ISOWATT218FX Applications ■ ■ Internal schematic diagram Horizontal deflection output for CRT TV Switch mode power supplies for CRT TV Description The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.
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