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BUL1102E - High voltage fast-switching NPN power transistor

General Description

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Key Features

  • High voltage capability Very high switching speed TAB.

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Full PDF Text Transcription for BUL1102E (Reference)

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BUL1102E High voltage fast-switching NPN power transistor Features ■ ■ High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for...

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high switching speed TAB Applications Four lamp electronic ballast for: 3 3 1 2 ■ ■ 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220 1 2 TO-220FP Description This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.