Datasheet Details
| Part number | BUL1102E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.03 KB |
| Description | NPN Transistor |
| Datasheet | BUL1102E-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUL1102E.
| Part number | BUL1102E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.03 KB |
| Description | NPN Transistor |
| Datasheet | BUL1102E-INCHANGE.pdf |
|
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·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Four lamp electronic ballsat for : 120v mains in push-pull configuration ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCES Collector-Emitter Voltage VBE= 0 1100 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUL1102E | High voltage fast-switching NPN power transistor | STMicroelectronics |
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