BUL1101E Overview
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0)...