Datasheet Details
| Part number | BUL1101E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 233.22 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet | BUL1101E-STMicroelectronics.pdf |
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Overview: ® BUL1101E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s LARGE RBSOA.
| Part number | BUL1101E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 233.22 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet | BUL1101E-STMicroelectronics.pdf |
|
|
|
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max.
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