STMicroelectronics BUL1102E
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BUL1102E |
|---|---|
| Datasheet | BUL1102E Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
●● High voltage capability Very high switching speed TAB
APPLICATIONS
Four lamp electronic ballast for: 3 3 1 2●
● 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220 1 2 TO-220FP
DESCRIPTION
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram C (2, TAB) (1) B E (3) Table 1. Device summary Marking BUL1102E BUL1102EFP Package TO-220 TO-220FP Packaging Tube Tube Order codes BUL1102E BUL1102EFP February 2012 Doc ID 7929 Rev 5 1/13 13 Absolute maximum ratings BUL1102E 1 Absolute maximum ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT VISO TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage...
