Datasheet4U Logo Datasheet4U.com

BUL1102E - High voltage fast-switching NPN power transistor

General Description

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Key Features

  • High voltage capability Very high switching speed TAB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUL1102E NPN Transistor INCHANGE
BUL118D Silicon NPN Power Transistor Inchange Semiconductor
BUL118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
BUL1203E NPN Transistor INCHANGE
BUL123S Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by STMicroelectronics

Part Number Description
BUL1101E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL1203 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL1203E High voltage fast-switching NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUL1102E High voltage fast-switching NPN power transistor Features ■ ■ High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 1 2 ■ ■ 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220 1 2 TO-220FP Description This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.