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BUV20 Datasheet

HIGH CURRENT NPN SILICON TRANSISTOR

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® BUV20
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
s SWITCHING REGULATORS
DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN
transistor mounted in jedec TO-3 metal case. It is
intended for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VCEX
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 100)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation at Tcase 25 oC
Storage Temperature
Junction Temperature
January 2000
Value
160
150
160
125
7
50
60
10
250
-65 to 200
200
Unit
V
V
V
V
V
A
A
A
W
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

BUV20 Datasheet

HIGH CURRENT NPN SILICON TRANSISTOR

No Preview Available !

BUV20
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX
Collector Cut-off
VCE = 160 V
Current (VBE = -1.5V) VCE = 160 V
Tcase = 125 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
V(BR)EB0Emitter-base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VBE(sat)Base-Emitter
Saturation Voltage
VCE = 100 V
VEB = 5 V
IC = 200 mA
L = 25 mH
IE = 50 mA
IC = 25 A
IC = 50 A
IC = 50 A
IB = 2.5 A
IB = 5 A
IB = 5 A
hFEDC Current Gain
VCE = 2 V
VCE = 4 V
IC = 25 A
IC = 50 A
fT Transition frequency VCE = 15 V IC = 2 A f = 100 MHz
RESISTIVE LOAD
ton Turn-on Time
tf Fall Time
ts Storage Time
IC = 50 A
Pulsed: Pulse duration = 300 µs, duty cycle 2 %.
IB1 = -IB2 = 5 A
Min.
125
7
20
10
8
Typ.
0.3
0.7
1.4
Max.
3
12
3
1
0.6
1.2
2
60
1.5
0.3
1.2
Unit
mA
mA
mA
mA
V
V
V
V
V
MHz
µs
µs
µs
2/4


Part Number BUV20
Description HIGH CURRENT NPN SILICON TRANSISTOR
Maker STMicroelectronics
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BUV20 Datasheet PDF






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