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STMicroelectronics Electronic Components Datasheet

D45H5 Datasheet

PNP SILICON POWER TRANSISTORS

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D45H5
® D45H8 \ D45H11
PNP SILICON POWER TRANSISTORS
s STM PREFERRED SALESTYPES
s LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
s FAST SWITCHING SPEED
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The D45H5, D45H8 and D45H11 are silicon
multiepitaxial planar PNP transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D45H8, D45H11 are complementary with D44H8,
D44H11.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc 25 oC
Storage Temperature
Max. Operating Junction Temperature
June 1998
D45H5
-45
Value
D45H8
-60
-5
-10
-20
-5
50
-65 to 150
150
D45H11
-80
Unit
V
V
A
A
A
W
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

D45H5 Datasheet

PNP SILICON POWER TRANSISTORS

No Preview Available !

D45H5/D45H8/D45H11
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 2.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
VCB = rated VCEO
VEB = -5V
IC = -100 mA
for D45H5
for D45H8
for D45H11
VCE(sat)Collector-Emitter
Saturation Voltage
IC = -8 A
IC = -8 A
IB = -0.4 A
IB = -0.8 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = -8 A
IB = -0.8 A
hFEDC Current Gain
IC = -2 A
IC = -4 A
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
VCE = -1 V
VCE = -1 V
Min. Typ.
-45
-60
-80
60 120
40 70
Max.
-10
-100
-1
-1
-1.5
Unit
µA
µA
V
V
V
V
V
2/4


Part Number D45H5
Description PNP SILICON POWER TRANSISTORS
Maker STMicroelectronics
Total Page 4 Pages
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