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G15M65DF2 Datasheet - STMicroelectronics

G15M65DF2 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, .

G15M65DF2 Features

* 6 μs of short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 15 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft and very fast recovery antiparallel diode

* Maximum junction te

G15M65DF2 Datasheet (915.56 KB)