Part G15M65DF2
Description Trench gate field-stop IGBT
Manufacturer STMicroelectronics
Size 915.56 KB
STMicroelectronics
G15M65DF2

Overview

  • 6 μs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 15 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C