G15M65DF2
G15M65DF2 is Trench gate field-stop IGBT manufactured by STMicroelectronics.
STGB15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package
- production data
2 3
D²PAK
Figure 1: Internal schematic diagram
Features
- 6 μs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 15 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
Applications
- Motor control
- UPS
- PFC
- General purpose inverter
Order code STGB15M65DF2
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in...
