G4M65DF2 - Trench gate field-stop IGBT

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.6 V (typ. ) @ IC = 4 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

STMicroelectronics

📥 Download Datasheet

Datasheet Details

Part number	G4M65DF2
Manufacturer	STMicroelectronics
File Size	416.53 KB
Description	Trench gate field-stop IGBT
Datasheet	G4M65DF2 Datasheet
Additional preview pages of the G4M65DF2 datasheet.

📁 Similar Datasheet

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text

STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.6 V (typ.) @ IC = 4 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Published: Jan 21, 2019 |