G4M65DF2 Datasheet - STMicroelectronics

Trench gate field-stop IGBT

G4M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, .

G4M65DF2 Datasheet (416.53 KB)

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Datasheet Details

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G4M65DF2

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STMicroelectronics ↗

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416.53 KB

Description:

Trench gate field-stop igbt.
STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diag.

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G4M65DF2 Trench gate field-stop IGBT STMicroelectronics

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G4M65DF2 General Description

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