G6M65DF2 igbt equivalent, trench gate field-stop igbt.
* 6 µs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 6 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistan.
* Motor control
* UPS
* PFC
Description
This device is an IGBT developed using an advanced proprietary trenc.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-.
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