GB10HF60KD Datasheet - STMicroelectronics

short-circuit rugged IGBT

GB10HF60KD Features

* Low on-voltage drop (VCE(sat))

* Operating junction temperature up to 175 °C

* Low Cres / Cies ratio (no cross conduction )susceptibility) t(s

* Tight parameter distribution uc

* Ultrafast soft-recovery antiparallel diode d

* Short-circuit rugged ProApplications lete

* M

GB10HF60KD General Description

cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applicatio.

GB10HF60KD Datasheet (449.33 KB)