STMicroelectronics GB10NB60S
This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).FEATURES
● Low on-voltage drop (VCE(sat))● High current capability
APPLICATIONS
● Light dimmer● Static relays
● Motor drive
DESCRIPTION
TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NB60ST4 STGP10NB60S GB10NB60S GP10NB60S Package D2PAK TO-220 September 2011 Doc ID 10985 Rev 4 Packaging Tape and reel Tube 1/19 19 Contents Contents STGB10NB60S, STGP10NB60S 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits