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GB10NB60S - low drop IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

Figure 1.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • High current capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NB60ST4 STGP10NB60S GB10NB60S GP10NB60S Package D2PAK TO-220 September 2011 Doc ID 10985 Rev 4 Packaging Tape and reel Tube 1/19 www.st.com 19 Contents Contents STGB10NB60S, STGP10NB60S 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics .