GB10NB60S Description
This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table.
GB10NB60S Key Features
- Low on-voltage drop (VCE(sat))
- High current capability