* Low on-voltage drop (VCE(sat))
* Operating junction temperature up to 175 °C
* Low Cres / Cies ratio (no cross conduction )susceptibility) t(s
* Tight.

lete
* Motor drives o
* High frequency inverters bs
* SMPS and PFC in both hard switch and Oresonant topologies.

cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the.

GF100N30

GF10A

GF10B

GF10D

GF10G

GF10J

GF10K

GF10M

GF10NB60SD

GF10NC60

GF10NC60HD

GF10NC60KD

GF10Q