GP10NC60KD Key Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction
- Very soft ultra fast recovery antiparallel diode
- Short-circuit withstand time 10µs
- Part: GP10NC60KD
- Manufacturer: STMicroelectronics (official site)
- Size: 1.30 MB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| GP10NC60HD | very fast IGBT |
| GP10NC60S | fast IGBT |
| GP10NB37LZ | internally clamped IGBT |
| GP10NB60S | low drop IGBT |
| GP10NB60SD | low drop IGBT |
GP10NC60KD Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Internal schematic diagram Table 1. 20 Contents Contents STGx10NC60KD 1 Electrical ratings.