GW30NC120HD Datasheet | STMicroelectronics

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast Power MESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 30A - Low on-losses - Low on-voltage drop (Vcesat) - High current capability - High input impedance (voltage driven) - Low gate charge - Ideal for soft switching application Application - Induction heating Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STGW30NC120HD Package...