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GW30NC60WD - ultra fast IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “W” identifies a family optimized for very high frequency application.

Figure 1.

Key Features

  • Type STGW30NC60WD.
  • VCES 600V VCE(sat)Max @25°C < 2.5V IC @100°C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH™ IGBT Features Type STGW30NC60WD ■ ■ ■ VCES 600V VCE(sat)Max @25°C < 2.5V IC @100°C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. Figure 1. Internal schematic diagram Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies Table 1.