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GW30NC120HD - STGW30NC120HD

General Description

Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances.

Key Features

  • Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 30A.
  • Low on-losses.
  • Low on-voltage drop (Vcesat).
  • High current capability.
  • High input impedance (voltage driven).
  • Low gate charge.
  • Ideal for soft switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 30A ■ Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Application ■ Induction heating Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1.